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RM300N85TLV

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The RM300N85TLV from Rectron Semiconductor is a MOSFET with Continous Drain Current 300 A, Drain Source Resistance 1.2 to 2.3 milliohm, Drain Source Breakdown Voltage 85 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RM300N85TLV can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM300N85TLV
  • Manufacturer
    Rectron Semiconductor
  • Description
    85 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    300 A
  • Drain Source Resistance
    1.2 to 2.3 milliohm
  • Drain Source Breakdown Voltage
    85 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    167 nC
  • Power Dissipation
    500 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    TOLL-8L
  • Applications
    Power Tool appliances, High power inverter system, BMS appliances, Halogen free

Technical Documents
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