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RM3C20S6 (N)

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RM3C20S6 (N) Image

The RM3C20S6 (N) from Rectron Semiconductor is a MOSFET with Continous Drain Current -2.5 to 3.8 A, Drain Source Resistance 30 to 230 milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1 to 1 V. Tags: Surface Mount. More details for RM3C20S6 (N) can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM3C20S6 (N)
  • Manufacturer
    Rectron Semiconductor
  • Description
    -20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -2.5 to 3.8 A
  • Drain Source Resistance
    30 to 230 milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to 1 V
  • Gate Charge
    4.8 to 10 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L
  • Applications
    Notebook, Load Switch, Networking, Hand-held Instruments

Technical Documents
View details on the manufacturer's website
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