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AP55T10GI-HF

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The AP55T10GI-HF from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 20 to 31.7 A, Drain Source Resistance 16.5 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 5 V. Tags: Through Hole. More details for AP55T10GI-HF can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP55T10GI-HF
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    36.7W, 100 V, 20 to 31.7 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 to 31.7 A
  • Drain Source Resistance
    16.5 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 5 V
  • Gate Charge
    70 to 112 nC
  • Switching Speed
    17 to 37 ns
  • Power Dissipation
    36.7W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220CFM
  • Note
    Input Capacitance :- 5440 pF
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