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RM50N30DN

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The RM50N30DN from Rectron Semiconductor is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 6.5 to 9 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for RM50N30DN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM50N30DN
  • Manufacturer
    Rectron Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    6.5 to 9 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    21 to 33 nC
  • Power Dissipation
    3.57 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN3x3

Technical Documents
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