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RM6A5N30S6

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RM6A5N30S6 Image

The RM6A5N30S6 from Rectron Semiconductor is a MOSFET with Continous Drain Current 6.5 A, Drain Source Resistance 27 to 55 milliohm, Drain Source Breakdown Voltage 32 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Surface Mount. More details for RM6A5N30S6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM6A5N30S6
  • Manufacturer
    Rectron Semiconductor
  • Description
    32 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.5 A
  • Drain Source Resistance
    27 to 55 milliohm
  • Drain Source Breakdown Voltage
    32 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    2.8 to 4.2 nC
  • Power Dissipation
    2.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT-23-6L
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply, Halogen free

Technical Documents
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