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RM7N600IP

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RM7N600IP Image

The RM7N600IP from Rectron Semiconductor is a MOSFET with Continous Drain Current 7 A, Drain Source Resistance 500 to 580 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4 V. Tags: Through Hole. More details for RM7N600IP can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM7N600IP
  • Manufacturer
    Rectron Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7 A
  • Drain Source Resistance
    500 to 580 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4 V
  • Gate Charge
    14.5 nC
  • Power Dissipation
    63 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251
  • Applications
    High efficiency switch mode power supplies, Electronic lamp ballasts, Uninterruptible Power Supply(UPS)

Technical Documents
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