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RMA7N20ED1

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RMA7N20ED1 Image

The RMA7N20ED1 from Rectron Semiconductor is a MOSFET with Continous Drain Current 0.7 A, Drain Source Resistance 180 to 260 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1.2 V. Tags: Surface Mount. More details for RMA7N20ED1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMA7N20ED1
  • Manufacturer
    Rectron Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.7 A
  • Drain Source Resistance
    180 to 260 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1.2 V
  • Gate Charge
    1.1 nC
  • Power Dissipation
    0.55 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN1006-3
  • Applications
    Load switch

Technical Documents
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