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RMD0A8P20ES9

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RMD0A8P20ES9 Image

The RMD0A8P20ES9 from Rectron Semiconductor is a MOSFET with Continous Drain Current -0.8 A, Drain Source Resistance 850 to 1500 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for RMD0A8P20ES9 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMD0A8P20ES9
  • Manufacturer
    Rectron Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.8 A
  • Drain Source Resistance
    850 to 1500 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    0.0018 nC
  • Power Dissipation
    0.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT-363

Technical Documents
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