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RMP10N80T2

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RMP10N80T2 Image

The RMP10N80T2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 700 to 100 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for RMP10N80T2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMP10N80T2
  • Manufacturer
    Rectron Semiconductor
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    700 to 100 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    59 nC
  • Power Dissipation
    80 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    High efficiency swith mode power supplies, Electronic lamp ballasts, Uninterruptible Power Supply(UPS)

Technical Documents
View details on the manufacturer's website
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