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ESN7410

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The ESN7410 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 19 to 25 A, Drain Source Resistance 14 to 35 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.2 V. Tags: Surface Mount. More details for ESN7410 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ESN7410
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    30 V, 19 to 25 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    19 to 25 A
  • Drain Source Resistance
    14 to 35 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.2 V
  • Gate Charge
    9.8 to 12 nC
  • Switching Speed
    3.2 to 24 ns
  • Power Dissipation
    20.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN3x3-8L
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 660 pF

Technical Documents
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