2SK3479

Note : Your request will be directed to Renesas.

2SK3479 Image

The 2SK3479 from Renesas is a MOSFET with Continous Drain Current -83 to 83 A, Drain Source Resistance 8.8 to 13 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Charge 210 nC. Tags: Through Hole. More details for 2SK3479 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    2SK3479
  • Manufacturer
    Renesas
  • Description
    100 V, -83 to 83 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -83 to 83 A
  • Drain Source Resistance
    8.8 to 13 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    210 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220AB

Technical Documents

Latest MOSFETs

View more products