The RBA300N10EANS-3UA02#GB0 from Renesas is an AEC-Q101-Qualified N-Channel Power MOSFET. It has a drain-source voltage of 100 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of less than 1.5 milli-ohms. This AEC-Q101-qualified MOSFET utilizes Renesas' split gate technology that provides enhanced switching capability for high power & high-frequency applications. It features low input capacitance, and low thermal resistance, and optimizes gate charge characteristics for improved efficiency. This RoHS-compliant MOSFET is available in a surface-mount package that measures 11.48 x 9.65 mm and is suitable for automotive applications such as small traction (2-wheel, 3-wheel vehicle), 48 V load, OBC, charging station, LDC, and industrial/infrastructure applications such as energy infrastructure, micro-inverter, power-tool and DC-DC applications.