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RJK0658DPA

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The RJK0658DPA from Renesas is a MOSFET with Continous Drain Current 25 A, Drain Source Resistance 9 to 11.1 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Charge 19.4 nC. Tags: Surface Mount. More details for RJK0658DPA can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJK0658DPA
  • Manufacturer
    Renesas
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25 A
  • Drain Source Resistance
    9 to 11.1 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    19.4 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    WPAK(3F)
  • Applications
    High Speed Power Switching

Technical Documents
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