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RJK0856DPB

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The RJK0856DPB from Renesas is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 6.9 to 8.9 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Charge 40 nC. Tags: Surface Mount. More details for RJK0856DPB can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJK0856DPB
  • Manufacturer
    Renesas
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    6.9 to 8.9 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    40 nC
  • Power Dissipation
    65 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK
  • Applications
    Power Switching

Technical Documents
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