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RJK1002DPN-A0

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The RJK1002DPN-A0 from Renesas is a MOSFET with Continous Drain Current 70 A, Drain Source Resistance 6 to 7.6 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Charge 94 nC. Tags: Through Hole. More details for RJK1002DPN-A0 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJK1002DPN-A0
  • Manufacturer
    Renesas
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    70 A
  • Drain Source Resistance
    6 to 7.6 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    94 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220ABA

Technical Documents
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