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RQJ0601DGDQS

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The RQJ0601DGDQS from Renesas is a MOSFET with Continous Drain Current -2.8 A, Drain Source Resistance 124 to 210 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 10 V, Gate Charge 9.6 nC. Tags: Through Hole. More details for RQJ0601DGDQS can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQJ0601DGDQS
  • Manufacturer
    Renesas
  • Description
    -60 V, 9.6 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.8 A
  • Drain Source Resistance
    124 to 210 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 10 V
  • Gate Charge
    9.6 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    UPAK
  • Applications
    Power Switching

Technical Documents
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