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RQK0609CQDQS

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The RQK0609CQDQS from Renesas is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 78 to 125 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -12 to 12 V, Gate Charge 5 nC. Tags: Through Hole. More details for RQK0609CQDQS can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQK0609CQDQS
  • Manufacturer
    Renesas
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    78 to 125 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Charge
    5 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    UPAK
  • Applications
    Power Switching

Technical Documents
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