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UPA1901TE

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The UPA1901TE from Renesas is a MOSFET with Continous Drain Current -6.5 to 6.5 A, Drain Source Resistance 31 to 54 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Charge 5.4 nC. Tags: Surface Mount. More details for UPA1901TE can be seen below.

Product Specifications

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Product Details

  • Part Number
    UPA1901TE
  • Manufacturer
    Renesas
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6.5 to 6.5 A
  • Drain Source Resistance
    31 to 54 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Charge
    5.4 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TMM

Technical Documents
View details on the manufacturer's website
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