The AG185FGD3HRBTL from ROHM Semiconductor is a MOSFET with Continous Drain Current -80 to 80 A, Drain Source Resistance 2.5 to 4.6 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for AG185FGD3HRBTL can be seen below.