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EM6M2

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EM6M2 Image

The EM6M2 from ROHM Semiconductor is a MOSFET with Continous Drain Current -0.2 to 0.2 A, Drain Source Resistance 700 to 9600 Milliohm, Drain Source Breakdown Voltage -20 to 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1 to 1 V. Tags: Surface Mount. More details for EM6M2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EM6M2
  • Manufacturer
    ROHM Semiconductor
  • Description
    -20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.2 to 0.2 A
  • Drain Source Resistance
    700 to 9600 Milliohm
  • Drain Source Breakdown Voltage
    -20 to 20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to 1 V
  • Power Dissipation
    0.15 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    Switching

Technical Documents
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