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STO36N60M6

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STO36N60M6 Image

The STO36N60M6 from STMicroelectronics is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 85 to 99 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage - 25 to 25 V, Gate Source Threshold Voltage 3.25 to 4.75 V. Tags: Surface Mount. More details for STO36N60M6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STO36N60M6
  • Manufacturer
    STMicroelectronics
  • Description
    - 25 to 25 V, 44.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    85 to 99 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    - 25 to 25 V
  • Gate Source Threshold Voltage
    3.25 to 4.75 V
  • Gate Charge
    44.3 nC
  • Power Dissipation
    230 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    TO-LL
  • Applications
    Switching applications

Technical Documents
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