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HP8KA1

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HP8KA1 Image

The HP8KA1 from ROHM Semiconductor is a MOSFET with Continous Drain Current 14 A, Drain Source Resistance 3.5 to 7 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for HP8KA1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    HP8KA1
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, 24 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    14 A
  • Drain Source Resistance
    3.5 to 7 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    24 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSOP8D
  • Applications
    Switching, LiB charging and discharging switch

Technical Documents
View details on the manufacturer's website
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