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HP8MA2

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HP8MA2 Image

The HP8MA2 from ROHM Semiconductor is a MOSFET with Continous Drain Current -18 to 18 A, Drain Source Resistance 7.5 to 29 Milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to 2.5 V. Tags: Surface Mount. More details for HP8MA2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    HP8MA2
  • Manufacturer
    ROHM Semiconductor
  • Description
    -30 to 30 V, 22 to 25 nC, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -18 to 18 A
  • Drain Source Resistance
    7.5 to 29 Milliohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to 2.5 V
  • Gate Charge
    22 to 25 nC
  • Power Dissipation
    7 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSOP8D
  • Applications
    Switching

Technical Documents
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