The HP8ME5TB1 from ROHM Semiconductor is a Dual N/P-channel MOSFET that is ideal for switching and motor drive applications. It has a drain-source breakdown voltage of ±100 V, a gate threshold voltage of ±2.5 V, and a drain-source on-resistance of up to 303 milli-ohms. This MOSFET has a continuous drain current of up to ±8.5 A and a pulsed drain current of less than ±12 A. It has a power dissipation of less than 20 W. This RoHS-compliant MOSFET offers low on-resistance in a high-power handling package. It is available in a surface-mount package that measures 6.10 x 5.0 mm.
