The HT8KE5HTB1 from ROHM Semiconductor is a Dual N-Channel Power MOSFET that is designed for switching and motor drive applications. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of less than 310 milli-ohms. This MOSFET has a continuous drain current of ±6.5 A and a pulsed drain current of ±10 A. It has a low on-resistance that reduces power consumption. This power MOSFET is available in a surface-mount package that measures 3.45 x 3.40 x 0.80 mm.
