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QS5U36

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QS5U36 Image

The QS5U36 from ROHM Semiconductor is a MOSFET with Continous Drain Current -2.5 to 2.5 A, Drain Source Resistance 58 to 240 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.3 to 1.3 V. Tags: Surface Mount. More details for QS5U36 can be seen below.

Product Specifications

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Product Details

  • Part Number
    QS5U36
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.5 to 2.5 A
  • Drain Source Resistance
    58 to 240 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.3 to 1.3 V
  • Gate Charge
    3.5 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-25T
  • Applications
    Switching

Technical Documents
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