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SiJ478DP-T1-GE3

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The SiJ478DP-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 6.4 to 11.5 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.6 V. Tags: Surface Mount. More details for SiJ478DP-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiJ478DP-T1-GE3
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, 17.1 to 33 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    6.4 to 11.5 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.6 V
  • Gate Charge
    17.1 to 33 nC
  • Power Dissipation
    62.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8L
  • Applications
    Primary Side Switching, Synchronous Rectification, DC/AC Inverters, LED Backlighting

Technical Documents
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