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RCJ510N25

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The RCJ510N25 from ROHM Semiconductor is a MOSFET with Continous Drain Current -51 to 51 A, Drain Source Resistance 48 to 155 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for RCJ510N25 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RCJ510N25
  • Manufacturer
    ROHM Semiconductor
  • Description
    250 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -51 to 51 A
  • Drain Source Resistance
    48 to 155 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    120 nC
  • Power Dissipation
    304 W
  • Temperature operating range
    150 Degree C
  • Industry
    Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263 (D2PAK)
  • Applications
    Switching Power Supply, Automotive Motor Drive, Automotive Solenoid Drive

Technical Documents
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