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R4P020N06HZGT100

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The R4P020N06HZGT100 from ROHM Semiconductor is a MOSFET with Continous Drain Current -2 to 2 A, Drain Source Resistance 150 to 340 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for R4P020N06HZGT100 can be seen below.

Product Specifications

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Product Details

  • Part Number
    R4P020N06HZGT100
  • Manufacturer
    ROHM Semiconductor
  • Description
    60 V, -2 to 2 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2 to 2 A
  • Drain Source Resistance
    150 to 340 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    7 nC
  • Switching Speed
    7 to 22 ns
  • Power Dissipation
    0.5 to 2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Applications
    Switching
  • Note
    Input Capacitance :- 140 pF

Technical Documents
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