1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. ROHM Semiconductor
  6. R6009ENX

R6009ENX

Download Datasheet Request Quote

Note : Your request will be directed to ROHM Semiconductor.

R6009ENX Image

The R6009ENX from ROHM Semiconductor is a MOSFET with Continous Drain Current -9 to 9 A, Drain Source Resistance 500 to 1000 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for R6009ENX can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    R6009ENX
  • Manufacturer
    ROHM Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9 to 9 A
  • Drain Source Resistance
    500 to 1000 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    23 nC
  • Power Dissipation
    48 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220FM
  • Applications
    Switching

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products