The R8019KNZ4 from ROHM Semiconductor is an N-Channel Super Junction MOSFET designed for high-speed switching applications. It has a drain-source breakdown voltage of 800 V, a gate threshold voltage of 3.5 V, and a drain-source on-resistance of less than 220 milli-ohms. This RoHS-compliant MOSFET has low on-resistance, enables high-speed switching and is designed for easy parallel use. It is available in a surface-mount package that measures 40.42 x 15.64 x 4.82 mm.
