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RD3G07BAT

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The RD3G07BAT from ROHM Semiconductor is a MOSFET with Continous Drain Current 70 A, Drain Source Resistance 5.7 to 8.7 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Through Hole. More details for RD3G07BAT can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD3G07BAT
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    70 A
  • Drain Source Resistance
    5.7 to 8.7 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    52 to 105 nC
  • Power Dissipation
    101 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    DPAK, TO-252
  • Applications
    Switching

Technical Documents
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