The RE1J002YN from ROHM Semiconductor is a MOSFET with Continous Drain Current -0.2 to 0.2 A, Drain Source Resistance 1600 to 9000 Milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.3 to 0.8 V. Tags: Surface Mount. More details for RE1J002YN can be seen below.
