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RF4E110BN

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RF4E110BN Image

The RF4E110BN from ROHM Semiconductor is a MOSFET with Continous Drain Current -11 to 11 A, Drain Source Resistance 8.5 to 15.4 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for RF4E110BN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RF4E110BN
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, 24 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -11 to 11 A
  • Drain Source Resistance
    8.5 to 15.4 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    24 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    0 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN20208S
  • Applications
    Switching

Technical Documents
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