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RF4L055GN

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RF4L055GN Image

The RF4L055GN from ROHM Semiconductor is a MOSFET with Continous Drain Current -5.5 to 5.5 A, Drain Source Resistance 31 to 66 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.7 V. Tags: Surface Mount. More details for RF4L055GN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RF4L055GN
  • Manufacturer
    ROHM Semiconductor
  • Description
    60 V, 7.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5.5 to 5.5 A
  • Drain Source Resistance
    31 to 66 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.7 V
  • Gate Charge
    7.8 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    0 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN20208S
  • Applications
    Switching

Technical Documents
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