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IPG20N06S2L-65

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IPG20N06S2L-65 Image

The IPG20N06S2L-65 from Infineon Technologies is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 67 mO, Drain Source Breakdown Voltage 55 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.6 V. Tags: Surface Mount. More details for IPG20N06S2L-65 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPG20N06S2L-65
  • Manufacturer
    Infineon Technologies
  • Description
    55 V Dual N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    67 mO
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.6 V
  • Gate Charge
    9.4 nC
  • Power Dissipation
    43 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Dual SSO8
  • Applications
    Direct fuel injection, ABS valves, solenoid control, load switches, LED and body lighting

Technical Documents
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