The RH6G040BGTB1 from ROHM Semiconductor is an N-Channel Enhancement Mode Power MOSFET that is ideal for switching applications. It has a drain-source breakdown voltage of over 40 V, a gate-source voltage of up to ±20 V, and a drain-source on-resistance of 2.8 milli-ohms. This power MOSFET has a drain current of up to 40 A and power dissipation of less than 59 W. It offers a low drain-source on-state resistance, high current handling capability, and a high power density. This RoHS-compliant MOSFET is available in a surface-mount package that measures 3.40 x 3.40 x 0.85 mm.