The RQ3E180AJ from ROHM Semiconductor is a MOSFET with Continous Drain Current -18 to 18 A, Drain Source Resistance 3.5 to 5.8 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for RQ3E180AJ can be seen below.