The RQ6E045RP from ROHM Semiconductor is a MOSFET with Continous Drain Current -4.5 to 4.5 A, Drain Source Resistance 25 to 53 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for RQ6E045RP can be seen below.