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RS1E260AT

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The RS1E260AT from ROHM Semiconductor is a MOSFET with Continous Drain Current -80 to 80 A, Drain Source Resistance 2.5 to 4.3 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for RS1E260AT can be seen below.

Product Specifications

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Product Details

  • Part Number
    RS1E260AT
  • Manufacturer
    ROHM Semiconductor
  • Description
    -30 V, 175 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -80 to 80 A
  • Drain Source Resistance
    2.5 to 4.3 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    175 nC
  • Power Dissipation
    40 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSOP8S
  • Applications
    Switching

Technical Documents
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