The RS6G100BGTB1 from ROHM Semiconductor is an N-Channel Enhancement Mode Power MOSFET that is ideal for switching applications.  It has a drain-source breakdown voltage of over 40 V, a gate-source voltage of up to ±20 V, and a drain-source on-resistance of 3.4 milli-ohms. This UIS-tested power MOSFET has a drain current of up to 100 A and power dissipation of less than 59 W. It offers low drain-source on-state resistance, high current handling capability, and a high power density. This RoHS-compliant MOSFET is available in a compact surface-mount package that measures 6 x 4.9 mm.