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SCT3080KR

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SCT3080KR Image

The SCT3080KR from ROHM Semiconductor is a MOSFET with Continous Drain Current 22 to 31 A, Drain Source Resistance 80 to 136 Milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -4 to 22 V, Gate Source Threshold Voltage 2.7 to 5.6 V. Tags: Through Hole. More details for SCT3080KR can be seen below.

Product Specifications

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Product Details

  • Part Number
    SCT3080KR
  • Manufacturer
    ROHM Semiconductor
  • Description
    1200 V, 60 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    22 to 31 A
  • Drain Source Resistance
    80 to 136 Milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -4 to 22 V
  • Gate Source Threshold Voltage
    2.7 to 5.6 V
  • Gate Charge
    60 nC
  • Power Dissipation
    165 W
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-4L
  • Applications
    Solar inverters, DC/DC converters, Switch mode power supplies, Induction heating, Motor drives

Technical Documents
View details on the manufacturer's website
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