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SH8K12

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SH8K12 Image

The SH8K12 from ROHM Semiconductor is a MOSFET with Continous Drain Current -5 to 5 A, Drain Source Resistance 30 to 63 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for SH8K12 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SH8K12
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, 4 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -5 to 5 A
  • Drain Source Resistance
    30 to 63 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    4 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP8
  • Applications
    Switching

Technical Documents
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