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GCMX015A170S1-E1

MOSFET by SemiQ (12 more products)
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GCMX015A170S1-E1 Image

The GCMX015A170S1-E1 from SemiQ is a MOSFET with Continous Drain Current 89 to 123 A, Drain Source Resistance 15 to 35 milli-ohm, Drain Source Breakdown Voltage 1700 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 1.8 to 4 V. Tags: Surface Mount. More details for GCMX015A170S1-E1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GCMX015A170S1-E1
  • Manufacturer
    SemiQ
  • Description
    -10 to 25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    89 to 123 A
  • Drain Source Resistance
    15 to 35 milli-ohm
  • Drain Source Breakdown Voltage
    1700 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    1.8 to 4 V
  • Gate Charge
    430 nC
  • Power Dissipation
    652 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-227
  • Applications
    Photovoltaic Inverter, Battery charger, Server power supplies, Energy storage system

Technical Documents
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