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GP2T080A120U

MOSFET by SemiQ (26 more products)
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The GP2T080A120U from SemiQ is a MOSFET with Continous Drain Current 26 to 35 A, Drain Source Resistance 71 to 134 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 25 V, Gate Charge 58 nC. Tags: Through Hole. More details for GP2T080A120U can be seen below.

Product Specifications

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Product Details

  • Part Number
    GP2T080A120U
  • Manufacturer
    SemiQ
  • Description
    1200V, 80 mOhm SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    26 to 35 A
  • Drain Source Resistance
    71 to 134 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Charge
    58 nC
  • Power Dissipation
    188 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3L
  • Applications
    Solar Inverters, Switch mode power supplies, UPS, Induction Heating and Welding, EV charging stations, High Voltage DC/DC Converters, Motor Drives

Technical Documents
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