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SHD226308B

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The SHD226308B from Sensitron Semiconductor is a MOSFET with Continous Drain Current 2.0 to 3.5 A, Drain Source Resistance 5.4 to 10.4 ohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for SHD226308B can be seen below.

Product Specifications

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Product Details

  • Part Number
    SHD226308B
  • Manufacturer
    Sensitron Semiconductor
  • Description
    1000 V, 2.0 to 3.5 A, N-Channel Enhancement Mode HERMETIC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.0 to 3.5 A
  • Drain Source Resistance
    5.4 to 10.4 ohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    80 nC
  • Switching Speed
    75 to 115 ns
  • Power Dissipation
    66 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-257
  • Note
    Input Capacitance :- 980 pF

Technical Documents
View details on the manufacturer's website
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