SHD231006

Note : Your request will be directed to Sensitron Semiconductor.

The SHD231006 from Sensitron Semiconductor is a MOSFET with Continous Drain Current 0.25 A, Drain Source Resistance 3.0 to 4.0 ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for SHD231006 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SHD231006
  • Manufacturer
    Sensitron Semiconductor
  • Description
    60 V, 0.25 A, N-Channel Enhancement Mode HERMETIC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.25 A
  • Drain Source Resistance
    3.0 to 4.0 ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    0.4 to 0.6 nC
  • Switching Speed
    3.0 to 20 ns
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    LCC-3
  • Note
    Input Capacitance :- 25 pF

Technical Documents

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