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B2M040120H

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The B2M040120H from BASiC Semiconductor is a MOSFET with Continous Drain Current 48 to 69 A, Drain Source Resistance 40 to 70 milli-ohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -8 to 22 V, Gate Source Threshold Voltage 1.9 to 3.5 V. Tags: Through Hole. More details for B2M040120H can be seen below.

Product Specifications

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Product Details

  • Part Number
    B2M040120H
  • Manufacturer
    BASiC Semiconductor
  • Description
    1200 V, 48 to 69 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    48 to 69 A
  • Drain Source Resistance
    40 to 70 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -8 to 22 V
  • Gate Source Threshold Voltage
    1.9 to 3.5 V
  • Gate Charge
    90 nC
  • Switching Speed
    16 to 58 ns
  • Power Dissipation
    333 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3
  • Applications
    Switch Mode Power Supplies (SMPS), Power Inverter & Solar Inverter, Motor Drivers & EV Charging Station, DC/DC Converter
  • Note
    Input Capacitance :- 2100 pF
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