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P4B60HP2F

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The P4B60HP2F from Shindengen America is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 1600 to 1900 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4.5 V. Tags: Surface Mount. More details for P4B60HP2F can be seen below.

Product Specifications

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Product Details

  • Part Number
    P4B60HP2F
  • Manufacturer
    Shindengen America
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    1600 to 1900 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4.5 V
  • Gate Charge
    13 nC
  • Power Dissipation
    70 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252AA
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