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1200 V SiC MOSFET

MOSFET by SK POWERTECH
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The 1200 V SiC MOSFET from SK POWERTECH is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 130 to 160 milli-ohm, Drain Source Breakdown Voltage 1200 V, Gate Charge 62 nC, Power Dissipation 115 W. Tags: Through Hole. More details for 1200 V SiC MOSFET can be seen below.

Product Specifications

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Product Details

  • Part Number
    1200 V SiC MOSFET
  • Manufacturer
    SK POWERTECH
  • Description
    1200 V, 20 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    130 to 160 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Charge
    62 nC
  • Power Dissipation
    115 W
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3L
  • Applications
    Switch Mode Power Supplies, Power Factor Correction, Motor Drives, HID Lighting
  • Note
    Input Capacitance :- 70 pF, Package Available :- Bar Die
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